ret y rt - ideal for automated placement, for compact pcb design - high surge current capability - ultrafast reverse recovery time for high frequency - negligible leakage current - halogen-free according to iec 61249-2-21 definition general purpose rectification for ac/dc bridge full wave rectification for smps. pfc function for led lighting ballast. also suitable for secondary stage of sy m bol u nit v rrm v v rms v v dc v i f(av) a i 2 ta 2 s trr ns t j o c t stg o c note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a document number: ds_d1403002 version: a14 1.70 maximum reverse recovery time (note 2) 35 200 400 600 280 420 140200 t y pi cal appli cat i on s high frequency inverters. maximum repetitive peak reverse voltage maximum rms voltage maximum instantaneous forward voltage (note 1) i f = 1 a o c/w 2580 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm v f r jl r ja rating for fusing (t<8.3ms) 0.95 1.20 maximum dc blocking voltage note 1: pulse test with pw=300 s, 1% duty cycle operating junction temperature range storage temperature range a maximum dc reverse current t j =25 at rated dc blocking voltage t j =125 typical thermal resistance i r 6.64 - 55 to +150 EABS1D thru eabs1j miniature ultrafast glass passivated brid g e rectifiers m ech an i cal dat a - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - moisture sensitivity level: level 1, per j-std-020 feat u res abs weight: 0.09 g (approximately) case: molded plastic body maximum average forward rectified current param et er polarity: polarity as marked on the body molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) eabs1 d eabs1 g eabs1 j 11 200 - 55 to +150 taiwan semiconductor 40 v a 400 600 downloaded from: http:///
part n o. note 2: for abs: packing code (whole series with green compound) part n o. EABS1D (ta=25 unless otherwise noted) document number: ds_d1403002 version: a14 orderi n g i n form at i on green compound descri pt i on ex am ple note 1: "x" defines voltage from 200v (EABS1D) to 400v (eabs1j) eabs1x (note 1) re suffix "g" abs 1,000 / 7" plastic reel preferred p/n pack i n g code EABS1D thru eabs1j taiwan semiconductor pack i n g code green com pou n d code pack age pack i n g rat i n gs an d ch aract eri st i cs cu rv es EABS1D reg re g green com pou n d code rg abs 5,000 / 13" paper reel 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 average forward current (a) ambient temperature ( o c) fig.1 maximum forward current derating curve 0 10 20 30 40 50 11 01 0 0 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine-wave 0.01 0.1 1 10 100 0 2 04 06 08 01 0 0 instantaneous reverse current ( a) percent of rated peak reverse voltage(%) fig. 2 typical reverse characteristics t j =25 t j =125 1 10 100 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 4 typical junction capacitance downloaded from: http:///
min max min max b 4.30 4.50 0.169 0.177 c 6.25 6.65 0.246 0.262 d 0.60 0.70 0.024 0.028 e 3.90 4.10 0.154 0.161 f 4.90 5.10 0.193 0.200 g 1.40 1.60 0.055 0.063 h 1.35 1.45 0.053 0.057 i 0.05 0.15 0.002 0.006 j 0.30 0.70 0.012 0.028 k 0.15 0.25 0.006 0.010 p/n = specific device code yw = date code f = factory code document number: ds_d1403002 version: a14 0.1660.284 0.081 0.225 EABS1D thru eabs1j taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) su ggest ed pad lay ou t symbol unit (mm) a1 . 5 b0 . 9 unit (inch) 0.0590.035 c4 . 2 2 m ark i n g di agram d7 . 2 2 e2 . 0 5 f5 . 7 2 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 instantaneous forward current (a) forward voltage (v) fig. 5 typical forward characteristics t j =25 t j =125 downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1403002 version: a14 EABS1D thru eabs1j taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///
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